Wednesday, July 4, 2012

1207.0794 (O. I. Velichko et al.)

Interstitial diffusion of ion-implanted boron in crystalline silicon    [PDF]

O. I. Velichko, A. P. Kavaliova
Modeling of the long-range migration of boron interstitials during low temperature annealing of ion-implanted silicon crystals has been carried out.
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